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Go to Editorial ManagerThis study examines the flow behavior and lift coefficient variations of a NACA 4415 airfoil using different vortex generator configurations. Experimental investigations are conducted in a subsonic wind tunnel at a Reynolds number of 1.8 x 105. The airfoil is tested with two types of vortex generators, namely the dome vortex and the convergent-divergent vortex, positioned at 10%, 28%, and 60% chord locations. Experimental lift coefficients are compared with Airfoil Tools database, showing consistent agreement within an angle of attack range of 0 to 18 degrees. At small angles of attack (0 to 8 degrees), the lift coefficients of the NACA 4415 airfoil with the dome vortex at 10%, 28%, and 60% chord positions are lower compared to the baseline configuration. However, beyond 14 degrees, the highest lift coefficient value after the angle range of 14-18 degrees is achieved at the 60% chord position with the dome vortex, 10.43% increase compared to the baseline lift coefficient. Furthermore, the best value for the lift coefficient after the angle range of 16-18 degrees at the 10% chord position is achieved with the dome vortex, where the maximum lift coefficient 9.4% increase compared to the baseline lift coefficient. It is noted that the baseline configuration consistently outperforms the convergent-divergent vortex configurations.
Surface reconstruction of silicon using lasers could be utilized to produce silicon nanostructures of various features. Electrochemical and photoelectrochemical etching processes of silicon were employed to synthesize nanostructured surface. Effects of current densities 5, 10 and 20 mA/cm2 on the surface features were examined. It is found that the surface porosity and layer thickness increase with the current density. Moreover, large surface area of 410 m2/cm3 can be achieved when laser power density 0f 0.6 W/cm2 was used during the etching process. Optimum operating conditions were found to achieve better silicon nanostructured surface features. The surface roughness can be reduced to 8.3 nm using laser beam of 650 nm irradiated the silicon surface during the photoelectrochemical etching process. The surface morphology of the nanostructured silicon surface using SEM and AFM could give rich details about the surface. Silver nanoparticles of 10 – 20 nm was embedded at the nanostructured silicon surface by LIFT process to reduce the surface resistance and maintain the large surface area. This technique enables silicon nanostructures to be efficiently used in many optoelectronic applications.