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Go to Editorial ManagerPorous Silicon (PSi) samples with (100) orientation n-type were prepared by photo-electrochemical etching process for different variable parameters and fixed electrolyte solution HF:C2H5OH:H2O (2:3:3). Physical and optical properties of PSi would be varied with the variation of process parameters such as current density, anodization time and laser wavelengths. Two types of 50 mW diode lasers were chosen, 473 nm Blue & 532 nm green at 20 mA/cm2 & 15 min etching time to assist the iodization process. The band gap of the fabricated layer has raised up to (2.9 eV) which is more than twice its original value for the c-Si (1.12 eV). _x000D_ Exploiting the obtained gap energy values, the refractive index of porous silicon layer was calculated depending upon Vandamme empirical relation. It was observed that the porosity is modifiable through etching conditions, which in turn makes refractive index also modifiable. Thus, the calculation depended on taking certain parameters as the current density and etching time in order to compare the effect of applying the two laser wavelengths. AFM was applied to observe the homogeneity and roughness of the PSi mono-layer. The results are in a very good agreement with the range of the refractive indices of PSi and the illumination with green laser gives a better conclusion to use in solar cells as a good absorber and a bad reflector.
Surface reconstruction of silicon using lasers could be utilized to produce silicon nanostructures of various features. Electrochemical and photoelectrochemical etching processes of silicon were employed to synthesize nanostructured surface. Effects of current densities 5, 10 and 20 mA/cm2 on the surface features were examined. It is found that the surface porosity and layer thickness increase with the current density. Moreover, large surface area of 410 m2/cm3 can be achieved when laser power density 0f 0.6 W/cm2 was used during the etching process. Optimum operating conditions were found to achieve better silicon nanostructured surface features. The surface roughness can be reduced to 8.3 nm using laser beam of 650 nm irradiated the silicon surface during the photoelectrochemical etching process. The surface morphology of the nanostructured silicon surface using SEM and AFM could give rich details about the surface. Silver nanoparticles of 10 – 20 nm was embedded at the nanostructured silicon surface by LIFT process to reduce the surface resistance and maintain the large surface area. This technique enables silicon nanostructures to be efficiently used in many optoelectronic applications.